We provide tests on packages and interconnects (component back-end), in order to evaluate various issues :


Control of the quality of microelectronic assembly operations : bonding (wire pull, ball shear), die attach (die shear)
Aging effect of mechanical resistance


We perform these tests on semiconductor devices back-end: wedge bonding, BGA, ball bonding, die attach.


Mechanical strength

Bonding :
Bond strength / Wire bond shear test : MIL-STD-883 Method 2011.9 ; IEC 60749-22 ; JESD22-B116B

Die attach on substrate :
Substrate Attach Strength : MIL-STD-883 Method 2027.2
Die shear strength : MIL-STD-883 Method 2019.9




Package hermeticity

Fine / gross leak :
MIL-STD 883 Method 1014.15 ; IEC 60749-8

Microcavities / very fine leaks :
Membrane deflection or N2O penetrant (SEMI MS8-0309)




Internal package integrity

PIND test : MIL-STD 750F Method 2052




Electrical tests & measurements

Passives
Capacitors, Resistors, Coils

Electromechanical
Connectors, relays (power), switches (signal)

Active, discrete components
Diodes, transistors, AOP

Specific components
IC, sensors / MEMS

Dissipation factor, tanΔ
Leakage current
ESR, ripple current
Electrical rigidity / breakdown voltage (max 12kV)

Contact resistance, R = f (T°, I)
Conductivity, sigma
Frequency sweep (spectrum analyzer)
Timing / response time

I/V
Frequency sweep
SOA, breakdown voltage

Continuity
Parametric tests
Functional tests
Full custom (bench development & custom instrumentation)

[-75°C; +200°C] for direct characterization (chillers)
Some measurements, in particular on MEMS, can be carried out in-situ, during thermal tests [-180°C; +300°C] or climatic (max 95% RH, 95°C).



Applicable standards

IEC 60749 Semiconductor devices - Mechanical and climatic test Methods

JEDEC JESD22 Solid State Device Environmental Testing

MIL-STD 750F Test methods for semiconductor devices (version F, 11/16)

MIL-STD-883K Test Method standard for microcircuits (version K, 04/16)



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